LPT-7 Diode-Pompa Solid-State Demonstrator Laser
Spesifikasi
Semikonduktor Laser | |
Daya Output CW | ≤ 500 mW |
Polarisasi | TE |
Panjang gelombang tengah | 808 ± 10 nm |
Kisaran Suhu Operasi | 10 ~ 40 °C |
Nyopir Saiki | 0 ~ 500 mA |
Nd: YVO4kristal | |
Konsentrasi Doping Nd | 0,1 ~ 3 atm% |
ukuran | 3 × 3 × 1 mm |
Flatness | <λ/10 @632.8 nm |
Lapisan | AR@1064 nm, R<0,1%;808="" t="">90% |
KTP Kristal | |
Range Panjang Gelombang Transmissive | 0,35 ~ 4,5 µm |
Koefisien elektro-optik | r33= 36 pm/V |
ukuran | 2 × 2 × 5 mm |
Pangilon Output | |
Dhiameter | Φ 6 mm |
Radius kelengkungan | 50 mm |
Laser Alignment He-Ne | ≤ 1 mW @632,8 nm |
IR Ndeleng Card | Rentang respon spektral: 0,7 ~ 1,6 µm |
Kacamata Safety Laser | OD = 4+ kanggo 808 nm lan 1064 nm |
Pengukur Daya Optik Kab | 2 μW ~ 200 mW, 6 skala |
DAFTAR PUSTAKA
Ora. | Katrangan | Parameter | Qty |
1 | Rel Optik | karo basa lan tutup bledug, He-Ne sumber daya laser diinstal nang basa | 1 |
2 | He-Ne Laser Holder | karo operator | 1 |
3 | Aperture Alignment | f1 mm bolongan karo carrier | 1 |
4 | Nyaring | bukaan f10 mm karo operator | 1 |
5 | Pangilon Output | BK7, f6 mm R = 50 mm karo wadhah luwes 4-sumbu lan operator | 1 |
6 | KTP Kristal | 2 × 2 × 5 mm kanthi wadhah lan operator sing bisa diatur sumbu 2 | 1 |
7 | Nd: YVO4 kristal | 3 × 3 × 1 mm kanthi wadhah lan operator sing bisa diatur sumbu 2 | 1 |
8 | 808nm LD (dioda laser) | ≤ 500 mW kanthi wadhah lan operator sing bisa diatur sumbu 4 | 1 |
9 | Pemegang Kepala Detektor | karo operator | 1 |
10 | Kertu Ndeleng Infrared | 750 ~ 1600 nm | 1 |
11 | Tabung Laser He-Ne | 1.5mW@632.8 nm | 1 |
12 | Pengukur Daya Optik Kab | 2 μW~200 mW (6 kisaran) | 1 |
13 | Kepala Detektor | karo tutup lan kirim | 1 |
14 | LD Kontroler Saiki | 0 ~ 500 mA | 1 |
15 | Kabel Daya | 3 | |
16 | Instruksi Manual | V1.0 | 1 |
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